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| CMLM0405 M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0405 is a single NPN Transistor and Schottky Diode packaged in a space saving SOT-563 case and designed for small signal general purpose applications where size and operational efficiency are prime requirements. * Complementary Device: CMLM0605 * Combination Low VCE (SAT) Transistor and Low VF Schottky Diode. SOT-563 CASE MARKING CODE: C45 SYMBOL PD TJ, Tstg JA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM 350 -65 to +150 357 60 40 6.0 200 40 500 3.5 10 UNITS mW C C/W UNITS V V V mA UNITS V mA A A MAXIMUM RATINGS (SOT-563 Package): (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted) SYMBOL ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib hie hre TEST CONDITIONS VCE=30V, VEB=3.0V IC=10A IC=1.0mA IE=10A IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=1.0V, IC=0.1mA VCE=1.0V, IC=1.0mA VCE=1.0V, IC=10mA VCE=1.0V, IC=50mA VCE=1.0V, IC=100mA VCE=20V, IC=10mA, f=100MHz VCB=5.0V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz MIN 60 40 6.0 TYP 120 60 7.5 0.057 0.090 0.75 0.85 180 185 180 150 90 MAX 50 0.100 0.200 0.85 0.95 UNITS nA V V V V V V V 0.65 90 100 100 70 30 300 300 1.0 0.1 4.0 8.0 12 10 MHz pF pF k X10-4 R1 (22-February 2005) Central CMLM0405 TM M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE MIN 100 1.0 MAX 400 60 4.0 35 35 200 50 20 100 40 0.13 0.21 0.27 0.35 0.47 50 UNITS mhos dB ns ns ns ns A A V V V V V V pF Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS hfe VCE=10V, IC=1.0mA, f=1.0kHz hoe VCE=10V, IC=1.0mA, f=1.0kHz NF VCE=5.0V,IC=100A, RS =1.0K, f=10Hz to 15.7kHz td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA ELECTRICAL CHARACTERISTICS D1 (TA=25C) IR VR= 10V IR VR= 30V BVR IR= 500A VF IF= 100A VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz SOT-563 - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 MARKING CODE: C45 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R1 (22-February 2005) |
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